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Static Wafer Metallizing in a cluster tool type arrangement is an established and efficient means of depositing a uniform layer over any size of wafer (150-300mm). As the wafer is static, the rates are high and the transfer of material to the wafer is efficient. In order to create a uniform layer, the erosion of the target has to be of a specific profile so as to generate a uniform vapour flux. Conventionally this is achieved via a rotating magnetic array that forms 2 or 3 erosion zones.
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If the amount of sputtering from each zone is controlled precisely a uniform layer can be deposited. Any change in target material and target to substrate separation will affect the system geometry and the layer thickness distribution. Gencoa can accurately simulate the multi-zone target erosion and the coating uniformity distribution and can hence create the correct erosion profile for given geometries.
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Gencoa have two different circular magnetron geometries for wafer metallizing - the HU static magnetic field as shown on the left, and the FFE, full face erosion magnetics. Both magnetic types can create the desired highly uniformity coating flux, but they have different cost and processing implications, hence the choice of magnetic type will depend upon your specific needs. For metallizing of wafers with pure metals, generally the HU source is optimum as the small re-deposit areas on the target are not as critical. For ceramics and materials which are prone to particle and dust generation, the FFE is a better choice as it has a clean target surface.
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Magnetically the HU models are more simple as there is no movement of the magnetics. The magnetic poles are arranged in a way to create the desired plasma erosion rings. A full face erosion magnetic system has moving magnetics - rotating at high speed off-axis.
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The HU and FFE magnetrons are available in target size from 5" or 125mm upto 16" or 400mm target size. As standard, each target size can offer <5% uniformity on a wafer with a size of 4" or 100mm less than the target size. This is achieved at low target to substrate separations - typically 50-80mm. The magnetics can be tuned to improve the uniformity for specific materials and geometries. This can be performed prior to despatch.
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The principle of static deposition at low target to substrate separartions is an attractive alternative to substrate rotation whilst coating. This method requires uniformity masking and results in lower rates as the wafers are not located under the targets at all times. Material is also wasted on the mask and shields that are required. Hence a HU cathode offers a highly cost effective solution for wafer coating. These results are equally valid for reactive coating of compound layers. If these cathodes are used in conjunction with Speedflo, a highly uniform oxide and nitride layer can be formed at high rate and under precise control. |