Products Rotatable Magnetics Print
Magnetics

Gencoa have a range of different magnet bar designs aimed at enhancing the process and film properties. The magnetic enhancements can be combined with gas bars, anodes, sensors and Speedflo to deliver a production ready integrated unit. Gencoa’s on-site process support is available at different levels ranging from installation help and training to full productivity and layer tuning.

 

SSS - Standard Strength Single

The SSS type magnetic design gives good all round performance in terms of target use and uniformity. It is used typically for single magnetrons which operate with a 6-12mm thick metallic target under normal pressures 10-3 mbar regime.

single rotatable sputter magnetron magnetics

HSS - High Strength Single

The HSS is a high strength version of the SSS which allows thicker targets to be used  or lower voltage and pressure operation. It is useful for TCO type targets where a lower voltage results in lower resitivity films. The field strength can be design up to 650 Gauss over the target surface, depending upon target thickness.

SS-TCO

When depositing transparent conducting oxides from a ceramic target or a metallic target in reactive mode the anode will be 'lost' due to the build-up of poorly insulating material on its surface. If the electrons can't 'find' a stable anode the plasma will become unstable. This can be avoided by the use of an active magnetically guided hidden anode that is always active. A patent is pending based upon this design.

 

DLIM

DLIM - are Double Low Impedance Magnetics for high rate reactive deposition of oxides with reduced energy usage and low substrate plasma heating. The DLIM work with 2 targets and AC or dual output pulsed DC power modes. The effective channelling of the electrons between the electrically switching targets offers multiple advantages over conventional magnetics. A patent is pending based upon this design.

 dual rotatable magnetron

DLIM-TCO-DC

When 2 targets are running a TCO layer process with DC or DC pulsed power a central anode can be used in a similar way to the SS-TCO in order to reduce the target voltage by ensuring a low impedance path for the electrons to the anode. In addition the prevention of plasma and electron impact on the substrate improves the properties of the TCO by reducing the damage induced in the growing layers. A patent is pending based upon this design.

 

DLIM-TCO-MF

When 2 targets are running a TCO layer process with AC or MF switching power each target alternatively acts as the anode.  This gives long term stability to the process, but MF power generates allot of electron movement between the targets which adds unwanted plasma bombardment of the TCO layer as it grows. The DLIM-TCO-MF magnetics channels the electrons more effectively between the targets and away from the TCO layer. A patent is pending based upon this design.