High Strength Magnetic Option (HS)

Low voltage sputtering. Magnetic field strength on target surface: 500 - 2000 G. Low pressure sputtering: 5x10-4 mbar. Suitable for the conventional ferro-magnetic target material sputtering. Lower plasma impedance. Possible to combine with SW, PP, LP, HY and HU options (HY and HU options for non magnetic material sputtering). Any mounting option can be combined. Any anode option can be used.

For certain applications a very high strength magnetic field is beneficial. Examples are:

• Ferro-magnetic target material sputtering where a very high field strength is required to saturate the target and hence create a sputtering plasma.
• Low Pressure sputtering required enhanced field strength to reduce the electron gyro-radius to allow plasma retention at low pressures.
• Low voltage sputtering is beneficial for ITO coating to reduce the energy of the back-reflected neutrals from the target.

Some low electrical conductivity targets require higher field strength to bring the power supply operation voltage into range.